The Engineering Chemical Technology Center, together with Tomsk State University, completed the development and creation of a plant for the production of high-purity hydrogen bromide (HBr) with 5N purity. The first 100 kg of high-purity Russian hydrogen bromide for microelectronics will be delivered to Russian enterprises in the first half of 2026.

The project was commissioned by the Ministry of Industry and Trade of the Russian Federation. The unit with an annual capacity of up to 650 kg of the final product is located in Tomsk at the Engineering Chemical Technology Center (ECTC) pilot site at TSU and is ready for launch. The total amount of financing for the project is 260.5 million rubles. ECTC is the only producer of this strategically important substance in Russia.

Key consumer enterprises confirmed their plans to switch from imported HBr, primarily Chinese-made, to Russian raw materials from 2026. There are some negotiations for framework agreements. Besides, there is an order for the first 100 kg of products in the first half of 2026.

In microelectronics, ultrapure hydrogen bromide (HBr) is used mainly as a process gas for plasma chemical (RIE/ICP) etching of silicon, polysilicon and related materials, providing high anisotropy and accurate formation of submicron structures. The high purity of HBr is critical for reducing defects and preventing spurious pollution, which increases the yield of modern integrated circuits, including modern microcircuits, including for bank and transport cards.

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The Engineering Chemical Technology Center is one of the developers of the Strategy for the Development of the Chemical Industry in Russia until 2042. At the same time, Tomsk State University is the operator of the Personnel Training Center for the Chemical Industry of the Russian Federation, created within the framework of the federal project “Advanced Training and Retraining of Qualified Personnel in New Materials and Chemistry” (national project “New Materials and Chemistry”).